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ZY75B Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce ZY75B
Description  Silicon Power Z-Diodes (non-planar technology)
Download  2 Pages
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

ZY75B Fiches technique(HTML) 1 Page - Diotec Semiconductor

  ZY75B Datasheet HTML 1Page - Diotec Semiconductor ZY75B Datasheet HTML 2Page - Diotec Semiconductor  
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ZY10B ... ZY200B (2 W)
ZY10B ... ZY200B (2 W)
Silicon Power Z-Diodes (non-planar technology)
Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
Version 2015-05-13
Dimensions - Maße [mm]
Maximum power dissipation
Maximale Verlustleistung
2 W
Nominal Z-voltage
Nominale Z-Spannung
10...200 V
Plastic case
Kunststoffgehäuse
DO-41
(DO-204AL)
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Standard Zener voltage tolerance is graded to the international E 24 standard (~ ±5%).
The devices ZY10B ... ZY200B are specially selected.
Other voltage tolerances and Zener voltages on request.
Die Standard-Toleranz der Z-Spannung ist gestuft nach der internationalen Reihe E 24 (~ ±5%).
Die Reihe ZY10B ... ZY200B ist eine Sonderselektion.
Andere Toleranzen oder Zener-Spannungen auf Anfrage.
Maximum ratings and Characteristics
Grenz- und Kennwerte
Power dissipation
Verlustleistung
TA = 50°C
Ptot
2 W 1)
Non repetitive peak power dissipation, t < 1 ms
Einmalige Impuls-Verlustleistung, t < 1 ms
TA = 25°C
PZSM
60 W
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
<45 K/W 1)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
RthT
<15 K/W
Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite
2
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
Tested with pulses – Gemessen mit Impulsen
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 0.77±0.07
Ø 2.6
-0.1


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