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STU7LN80K5 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STU7LN80K5 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 12 page January 2016 DocID028830 Rev 1 1/12 This is information on a product in full production. www.st.com STU7LN80K5 N- channel 800 V, 0.95 Ω typ., 5 A MDmesh™ K5 Power MOSFET in a IPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STU7LN80K5 800 V 1.15 Ω 5 A • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STU7LN80K5 7LN80K5 IPAK Tube 3 2 1 TAB IPAK |
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