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STFI24NM60N Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STFI24NM60N
Description  Low input capacitance and gate charge
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFI24NM60N Fiches technique(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
July 2014
DocID022440 Rev 3
1/12
STFI24NM60N
N-channel 600 V, 0.168
Ω typ., 17 A MDmesh™ II Power MOSFET
in a I²PAKFP package
Datasheet
production data
Figure 1. Internal schematic diagram
Features
• Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
I2PAKFP
1
2
3
(TO-281)
Order codes
VDS @Tjmax
RDS(on) max.
ID
STFI24NM60N
650 V
0.19
17 A
Table 1. Device summary
Order code
Marking
Packages
Packaging
STFI24NM60N
24NM60N
I2PAKFP (TO-281)
Tube
www.st.com


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