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STFI24NM60N Fiches technique(PDF) 1 Page - STMicroelectronics |
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STFI24NM60N Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 12 page This is information on a product in full production. July 2014 DocID022440 Rev 3 1/12 STFI24NM60N N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET in a I²PAKFP package Datasheet − production data Figure 1. Internal schematic diagram Features • Fully insulated and low profile package with increased creepage path from pin to heatsink plate • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. I2PAKFP 1 2 3 (TO-281) Order codes VDS @Tjmax RDS(on) max. ID STFI24NM60N 650 V 0.19 Ω 17 A Table 1. Device summary Order code Marking Packages Packaging STFI24NM60N 24NM60N I2PAKFP (TO-281) Tube www.st.com |
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