STAP85025S datasheet(4/13 Pages) STMICROELECTRONICS

No de pièce	STAP85025S

Description	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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Electrical characteristics

STAP85025S

4/13

DocID15795 Rev 5

2

Electrical characteristics

TCASE = +25 °C

2.1

Static

2.2

Dynamic

2.3

ESD protection characteristics

Table 4. Static

Symbol

Test conditions

Min.

Typ.

Max.

Unit

IDSS

VGS = 0 V

VDS = 25 V

-

1µA

IGSS

VGS = 5 V

VDS = 0 V

1

µA

VGS(Q)

VDS = 10 V

ID = 300 mA

4.1

V

VDS(ON)

VGS = 10 V

ID = 1 A

0.27

0.31

V

CISS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

55

pF

COSS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

40

pF

CRSS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

1.5

pF

Table 5. Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

P3dB

VDD = 13.6 V, IDQ = 300 mA, f = 870 MHz

25

30

-

W

GP

VDD = 13.6 V, IDQ = 300 mA, POUT = 10 W, f = 870 MHz

15

17.3

dB

hD

VDD = 13.6 V, IDQ = 300 mA, POUT = P3dB, f = 870 MHz

60

66

%

Load

mismatch

VDD = 17 V, IDQ = 300 mA, POUT = 45 W, f = 870 MHz

all phase angles

20:1

VSWR

Table 6. ESD protection characteristics

Test conditions

Class

Human body model

2

Machine model

M3

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