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STD45P4LLF6AG Fiches technique(PDF) 1 Page - STMicroelectronics |
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STD45P4LLF6AG Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 16 page July 2015 DocID027807 Rev 2 1/16 This is information on a product in full production. www.st.com STD45P4LLF6AG Automotive-grade P-channel - 40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD45P4LLF6AG -40 V 15 mΩ -50 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STD45P4LLF6AG 45P4LLF6 DPAK Tape and reel AM11258v1 D(2, TAB) S(3) G(1) |
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