STB43N65M5 datasheet(4/16 Pages) STMICROELECTRONICS

No de pièce	STB43N65M5

Description	Low gate charge and input capacitance

Download	16 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

4 / 16 page

Electrical characteristics

STB43N65M5

4/16

DocID028150 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 1 mA

650

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 650 V

1

µA

VGS = 0 V, VDS = 650 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±100

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 21 A

0.058

0.063

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

4400

-

pF

Coss

Output capacitance

-

100

-

Crss

Reverse transfer

capacitance

-

5.3

-

Coss eq.

(1)

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0 V

-

300

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

1.2

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 21 A,

VGS = 10 V (see Figure 15:

"Gate charge test circuit")

-

100

-

nC

Qgs

Gate-source charge

-

23

-

Qgd

Gate-drain charge

-

40

-

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 28 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 14: "Switching times

test circuit for resistive load"

and Figure 19: "Switching time

waveform")

-

73

-

ns

tr

Rise time

-

15

-

td(off)

Turn-off delay time

-

12

-

tf

Fall time

-

19

-

Numéro de pièce similaire - STB43N65M5

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	STB43N65M5	313Kb / 2P	isc N-Channel MOSFET Transistor

More results

Description similaire - STB43N65M5

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STB27NM60ND	940Kb / 19P	Low input capacitance and gate charge
	STY100NM60N	815Kb / 13P	Low input capacitance and gate charge November 2012 Rev 2
	F21NM60ND	559Kb / 18P	Low input capacitance and gate charge
	STL15N65M5	1Mb / 16P	Low gate charge and input capacitance December 2016 Rev 2
	STL38N65M5	1Mb / 17P	Low input capacitance and gate charge
	STE145N65M5	820Kb / 13P	Low gate charge and input capacitance November 2015 Rev 2
	STB26NM60ND	1Mb / 23P	Low input capacitance and gate charge
	STL3NM60N	865Kb / 13P	Low input capacitance and gate charge November 2014 Rev 2
	STB7ANM60N	1Mb / 20P	Low input capacitance and gate charge
	STFI24NM60N	804Kb / 12P	Low input capacitance and gate charge

More results

STB43N65M5 Fiches technique(PDF) 4 Page - STMicroelectronics

STB43N65M5 Fiches technique(HTML) 4 Page - STMicroelectronics

Numéro de pièce similaire - STB43N65M5

Description similaire - STB43N65M5

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Fiches technique Télécharger

Lien URL