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TS1109-200IDT833 Datasheet(Fiches technique) 4 Page - Silicon Laboratories

Numéro de pièce TS1109-200IDT833
Description  Overcurrent and Undercurrent Detection
Télécharger  20 Pages
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Fabricant  SILABS [Silicon Laboratories]
Site Internet  http://www.silabs.com
Logo SILABS - Silicon Laboratories

TS1109-200IDT833 Datasheet(HTML) 4 Page - Silicon Laboratories

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2.2 Current Sense Amplifier + Output Buffer
The internal configuration of the TS1109 bidirectional current-sense amplifier is a variation of the TS1101 bidirectional current-sense
amplifier. The TS1109 current-sense amplifier is configured for fully differential input/output operation.
Referring to the block diagram, the inputs of the TS1109’s differential input/output amplifier are connected to RS+ and RS– across an
external RSENSE resistor that is used to measure current. At the non-inverting input of the current-sense amplifier, the applied voltage
difference in voltage between RS+ and RS– is ILOAD x RSENSE. Since the RS– terminal is the non-inverting input of the internal op-amp,
the current-sense op-amp action drives PMOS[1/2] to drive current across RGAIN[A/B] to equalize voltage at its inputs.
Thus, since the M1 PMOS source is connected to the inverting input of the internal op-amp and since the voltage drop across RGAINA is
the same as the external VSENSE, the M1 PMOS’ drain-source current is equal to:
IDS(M 1) =
VSENSE
RGAINA
IDS(M 1) =
ILOAD × RSENSE
RGAINA
The drain terminal of the M1 PMOS is connected to the transimpedance amplifier’s gain resistor, ROUT, via the inverting terminal. The
non-inverting terminal of the transimpedance amplifier is internally connected to VBIAS, therefore the output voltage of the TS1109 at
the OUT terminal is:
VOUT = VBIAS − ILOAD × RSENSE ×
ROUT
RGAINA
When the voltage at the RS– terminal is greater than the voltage at the RS+ terminal, the external VSENSE voltage drop is impressed
upon RGAINB. The voltage drop across RGAINB is then converted into a current by the M2 PMOS. The M2 PMOS drain-source current is
the input current for the NMOS current mirror which is matched with a 1-to-1 ratio. The transimpedance amplifier sources the M2 PMOS
drain-source current for the NMOS current mirror. Therefore, the output voltage of the TS1109 at the OUT terminal is:
VOUT = VBIAS + ILOAD × RSENSE ×
ROUT
RGAINB
When M1 is conducting current (VRS+ > VRS–), the TS1109’s internal amplifier holds M2 OFF. When M2 is conducting current (VRS– >
VRS+), the internal amplifier holds M1 OFF. In either case, the disabled PMOS does not contribute to the resultant output voltage.
The current-sense amplifier’s gain accuracy is therefore the ratio match of ROUT to RGAIN[A/B]. For each of the two gain options availa-
ble, The following table lists the values for RGAIN[A/B].
Table 2.1. Internal Gain Setting Resistors (Typical Values)
GAIN (V/V)
RGAIN[A/B] (Ω)
ROUT (Ω)
Part Number
20
2 k
40 k
TS1109-20
200
200
40 k
TS1109-200
The TS1109 allows access to the inverting terminal of the transimpedance amplifier by the FILT pin, whereby a series RC filter may be
connected to reduce noise at the OUT terminal. The recommended RC filter is 4 kΩ and 0.47 µF connected in series from FILT to GND
to suppress the noise. Any capacitance at the OUT terminal should be minimized for stable operation of the buffer.
TS1109 Data Sheet
System Overview
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Rev. 1.0 | 3


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