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TS1109-20IDT833 Datasheet(Fiches technique) 1 Page - Silicon Laboratories

Numéro de pièce TS1109-20IDT833
Description  Overcurrent and Undercurrent Detection
Télécharger  20 Pages
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Fabricant  SILABS [Silicon Laboratories]
Site Internet  http://www.silabs.com
Logo SILABS - Silicon Laboratories

TS1109-20IDT833 Datasheet(HTML) 1 Page - Silicon Laboratories

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TS1109 Data Sheet
TS1109 Bidirectional Current-Sense Amplifier with Buffered Bipo-
lar Output
The TS1109 incorporates a bidirectional current-sense amplifier plus a buffered bipolar
output with an adjustable bias. The internal configuration of the TS1109 high-side cur-
rent-sense amplifier is a variation of the TS1101 bidirectional current-sense amplifier,
consuming 0.68 µA(typ) and 1.2 µA(max). The current-sense amplifier’s buffered output
consumes only 0.76 µ A(typ) and 1.3 µA(max) of supply current. With an input offset volt-
age of 150 µV(max) and a gain error of 1%(max), the TS1109 is optimized for high preci-
sion current measurements
Applications
• Power Management Systems
• Portable/Battery-Powered Systems
• Smart Chargers
• Battery Monitoring
• Overcurrent and Undercurrent Detection
• Remote Sensing
• Industrial Controls
KEY FEATURES
• Low Supply Current
• Current Sense Amplifier: 0.68 µA
• IVDD: 0.76 µA
• High Side Bidirectional Current Sense
Amplifier
• Wide CSA Input Common Mode Range: +2
V to +27 V
• Low CSA Input Offset Voltage: 150
µV(max)
• Low Gain Error: 1%(max)
• Two Gain Options Available:
• Gain = 20 V/V : TS1109-20
• Gain = 200 V/V : TS1109-200
• 8-Pin TDFN Packaging (3 mm x 3 mm)
silabs.com | Smart. Connected. Energy-friendly.
Rev. 1.0


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