BFY450H datasheet(2/5 Pages) INFINEON

No de pièce	BFY450H

Description	HiRel NPN Silicon RF Transistor

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Fabricant	INFINEON [Infineon Technologies AG]

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2 / 5 page

BFY450

Semiconductor Group

2 of 5

Draft B, September 99

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

4.5

V

Collector-base voltage

VCBO

15

V

Emitter-base voltage

VEBO

1.5

V

Collector current

IC

100

mA

Base current

IB

10

mA

Total power dissipation,

TS

≤ 110°C

1), 2)

Ptot

450

mW

Junction temperature

Tj

175

°C

Operating temperature range

Top

-65...+175

°C

Storage temperature range

Tstg

-65...+175

°C

Thermal Resistance

Junction-soldering point

2)

Rth JS

<

145

K/W

Notes.:

1) At TS = + 110 °C. For TS > + 110 °C derating is required.

2) TS is measured on the collector lead at the soldering point to the pcb.

Electrical Characteristics

at TA=25°C; unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-base cutoff current

VCB = 5 V, IE = 0

ICBO

-

100

nA

Collector-emitter cutoff current

1.)

VCE = 4.5 V, IB = 1.0µA

ICEX

-

200

(t.b.d.)

µA

Emitter-base cuttoff current

VEB = 1.5 V, IC = 0

IEBO

--

50

µA

DC current gain

IC = 20 mA, VCE = 1 V

hFE

50

90

150

-

Notes:

1.) This Test assures V(BR)CE0 > 4.5V

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