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TS1100-200EG5 Fiches technique(PDF) 9 Page - Silicon Laboratories |
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TS1100-200EG5 Fiches technique(HTML) 9 Page - Silicon Laboratories |
9 / 20 page Parameter Symbol Conditions Min Typ Max Units OUT Low Voltage VAOL TS1100 and TS1101 Gain = 25 — — 5 mV Gain = 50 — — 10 Gain = 100 — — 20 Gain = 200 — — 40 TS1102 and TS1103 Gain = 25 — — 7.5 Gain = 50 — — 15 Gain = 100 — — 30 Gain = 200 — — 60 OUT High Voltage VAOH VOH = VRS– – VOUT — 0.05 0.2 V Sign Comparator Parameters (TS1106 Only) Output Low Voltage VCOL VDD = 1.25 V, ISINK = 5 µA — 0.2 V VDD = 1.8 V, ISINK = 35 µA — — Output High Voltage VCOH VDD = 1.25 V, ISOURCE = 5 µA VDD – 0.2 — — V VDD = 1.8 V, ISOURCE = 35 µA — — Notes: 1. VRS+ = 3.6 V; VSENSE = (VRS+ – VRS–) = 0 V; COUT = 47 nF; VDD = 1.8 V; TA = –40 °C to +105 °C, unless otherwise noted. Typical values are at TA = +25 °C. 2. Extrapolated to VOUT=0V. IRS++IRS- is the total current into the RS+ and the RS– pins. 3. Input offset voltage VOS is extrapolated from a VOUT(+) measurement with VSENSE set to +1 mV and a VOUT(–) measurement with VSENSE set to -1mV; vis-a-viz, Average VOS = (VOUT(–) – VOUT(+))/(2 x GAIN). 4. Amplitude of VSENSE lower or higher than VOS required to cause the comparator to switch output states. 5. Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer characteristic. TS1100 and TS1102 only applies positive VSENSE values. For GAIN = 25, the applied VSENSE is 20 mV and 120 mV. For GAIN = 50, the applied VSENSE is 10 mV and 60 mV. For GAIN = 100, the applied VSENSE is 5 mV and 30 mV. For GAIN = 200, the applied VSENSE is 2.5 mV and 15 mV. 6. The device is stable for any capacitance load at VOUT. TS1100/01/02/03 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 8 |
Numéro de pièce similaire - TS1100-200EG5 |
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Description similaire - TS1100-200EG5 |
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