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BF1005W Fiches technique(PDF) 3 Page - Infineon Technologies AG

No de pièce BF1005W
Description  Silicon N-Channel MOSFET Tetrode
Download  5 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BF1005W Fiches technique(HTML) 3 Page - Infineon Technologies AG

  BF1005W Datasheet HTML 1Page - Infineon Technologies AG BF1005W Datasheet HTML 2Page - Infineon Technologies AG BF1005W Datasheet HTML 3Page - Infineon Technologies AG BF1005W Datasheet HTML 4Page - Infineon Technologies AG BF1005W Datasheet HTML 5Page - Infineon Technologies AG  
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Feb-18-2004
3
BF1005...
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
(verified by random sampling)
Forward transconductance
VDS = 5 V, VG2S = 4.5 V
gfs
20
24
-
mS
Gate1 input capacitance
VDS = 5 V, VG2S = 4 V, f = 1 MHz
Cg1ss
-
2.1
2.5
pF
Output capacitance
VDS = 5 V, VG2S = 4 V, f = 100 MHz
Cdss
-
1.3
-
Power gain (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Gp
17
19
-
dB
Noise figure
VDS = 5 V, VG2S = 4 V, f = 800 MHz
F
-
1.6
2.5
dB
Gain control range
VDS = 5 V, VG2S = 4V ...0V, f = 800 GHz
∆Gp
40
50
-


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