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AM-HSB(X)-7 Datasheet(Fiches technique) 4 Page - Diodes Incorporated

Numéro de pièce AM-HSB(X)-7
Description  SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK
Télécharger  17 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

AM-HSB(X)-7 Datasheet(HTML) 4 Page - Diodes Incorporated

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AP9214L
Document number: DS38413 Rev. 1 - 2
4 of 17
www.diodes.com
December 2015
© Diodes Incorporated
AP9214L
Absolute Maximum Ratings (Notes 5 & 6)
Symbol
Parameter
Ratings
Unit
VDS
Supply Voltage (Between VDD and VSS)
-0.3 to 12
V
VDM
Charge Input Voltage
(Between VDD and VM for Protection Chip)
-0.3 to 24
V
VDSS
MOSFET Drain-to-Source Voltage
24
V
VGSS
MOSFET Gate-to-Source Voltage
±12
V
ID
Continuous Drain Current, VGS = 4.5V, TA = +25°C
9.0
A
Continuous Drain Current, VGS = 4.5V, TA = +70°C
7.1
A
PD
Power Dissipation
1000
mW
TJ
Maximum Junction Temperature
+150
°C
TSTG
Storage Temperature Range
-65 to +150
°C
Notes:
5. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
6. Ratings apply to ambient temperature at +25°C. The JEDEC High-K board design used to derive this data was a 2 inch x 2 inch multilayer board with 2-
ounce internal power and ground planes and 2-ounce copper traces on the top and bottom of the board.
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Unit
VDS
Supply Voltage (Between VDD and VSS)
1.5
5.5
V
VDM
Charge Input Voltage (Between VDD and VM)
-0.3
5.5
V
TA
Operating Ambient Temperature
-40
+85
ºC


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