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SB007-03Q-TL-E Datasheet(Fiches technique) 2 Page - ON Semiconductor

Numéro de pièce SB007-03Q-TL-E
Description  Schottky Barrier Diode
Télécharger  5 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SB007-03Q-TL-E Datasheet(HTML) 2 Page - ON Semiconductor

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SB007-03Q
No.2939-2/5
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=20μA30
V
Forward Voltage
VF
IF=70mA
0.55
V
Reverse Current
IR
VR=15V
5
μA
Interterminal Capacitance
C
VR=10V, f=1MHz
3.0
pF
Reverse Recovery Time
trr
IF=IR=10mA, See specified Test Circuit.
10
ns
trr Test Circuit
Ordering Information
Device
Package
Shipping
memo
SB007-03Q-TL-E
MCP
3,000pcs./reel
Pb Free
Duty
10%
50
Ω
100
Ω
10
Ω
5V
trr
10
μs
IF -- VF
IR -- VR
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
Reverse Voltage, VR -- V
C -- VR
IFSM -- t
Time, t -- s
5
10
152025
30
35
2
5
2
5
2
5
2
5
1000
100
10
1.0
2
5
0.1
0.01
0
ID00245
0.4
0.6
0.8
1.2
1.0
0.2
0
ID00244
f=1MHz
Ta=125°
C
100°C
25
°C
50
°C
75
°C
3
7
5
2
2
1.0
10
3
7
5
7
5
2
2
2
1.0
10
3
7
5
100
3
7
5
72
3
5
57
1.0
2
10
35
2
1.0
32
3
57
2
0.1
35
7
0.01
7
ID00246
0
0.4
0.8
2.0
2.4
1.2
1.6
2.8
ID00247
IS
20ms
t
Current waveform 50Hz sine wave


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