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SB2003M-TL-W Fiches technique(PDF) 1 Page - ON Semiconductor |
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SB2003M-TL-W Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 4 page 61714HK TC-00002878/N0712TKIM/62310TKIM/62405MSIM SB No.8371-1/4 http://onsemi.com Semiconductor Components Industries, LLC, 2014 June, 2014 SB2003M Schottky Barrier Diode 30V, 2A, Low IR, Single MCPH6 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Applications • Highfrequencyrectification(switchingregulators,converters,choppers) Features • Lowswitchingnoise • Halogen free compliance • Lowleakagecurrentandhighreliabilityduetohighlyreliableplanarstructure • Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight0.85mm) Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V Average Output Current IO 2.0 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Package Dimensions unit:mm(typ) 7022A-014 Ordering number : EN8371C Product & Package Information •Package :MCPH6 •JEITA,JEDEC :SC-88,SC-70-6,SOT-363 •MinimumPackingQuantity :3,000pcs./reel Packing Type : TL Marking Electrical Connection TL 1 : Cathode 2 : Cathode 3 : Anode 4 : No Contact 5 : Cathode 6 : Cathode MCPH6 2.0 0.3 0.65 0.15 0 to 0.02 65 4 12 3 65 4 12 3 SB2003M-TL-E SB2003M-TL-W SE 65 4 13 2 |
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