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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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MMSF4N01HD Fiches technique(PDF) 5 Page - ON Semiconductor |
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MMSF4N01HD Fiches technique(HTML) 5 Page - ON Semiconductor |
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5 / 12 page  MMSF4N01HD http://onsemi.com 5 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge RG, GATE RESISTANCE (OHMS) 0.1 10 100 100 10 1 VDD = 6 V ID = 4 A VGS = 4.5 V TJ = 25°C tr tf td(off) td(on) Figure 9. Resistive Switching Time Variation versus Gate Resistance 10 8 6 4 2 0 0 4 2 0 QT, TOTAL CHARGE (nC) 5 3 1 2 468 10 ID = 4 A TJ = 25°C VDS VGS Q2 Q3 Q1 1 QT DRAIN−TO−SOURCE DIODE CHARACTERISTICS The switching characteristics of a MOSFET body diode are very important in systems using it as a freewheeling or commutating diode. Of particular interest are the reverse recovery characteristics which play a major role in determining switching losses, radiated noise, EMI and RFI. System switching losses are largely due to the nature of the body diode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 14. It is this stored charge that, when cleared from the diode, passes through a potential and defines an energy loss. Obviously, repeatedly forcing the diode through reverse recovery further increases switching losses. Therefore, one would like a diode with short trr and low QRR specifications to minimize these losses. The abruptness of diode reverse recovery effects the amount of radiated noise, voltage spikes, and current ringing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by high di/dts. The diode’s negative di/dt during ta is directly controlled by the device clearing the stored charge. However, the positive di/dt during tb is an uncontrollable diode characteristic and is usually the culprit that induces current ringing. Therefore, when comparing diodes, the ratio of tb/ta serves as a good indicator of recovery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter trr), have less stored charge and a softer reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through reverse recovery at a higher di/dt than a standard cell MOSFET diode without increasing the current ringing or the noise generated. In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses. 0.3 0.4 0.5 0.6 0.7 0 1 2 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current 0.8 0.9 3 4 VGS = 0 V TJ = 25°C 1 |
Numéro de pièce similaire - MMSF4N01HD |
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Description similaire - MMSF4N01HD |
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