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MMSF3P03HDR2 Fiches technique(PDF) 1 Page - ON Semiconductor |
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MMSF3P03HDR2 Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 12 page Publication Order Number: MMSF3P03HD/D © Semiconductor Components Industries, LLC, 2000 September, 2004 − Rev. XXX 1 MMSF3P03HD Preferred Device Power MOSFET 3 Amps, 30 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS t devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • I DSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 30 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID ID IDM 4.6 3.0 50 Adc Apk Total Power Dissipation @ TA = 25°C (Note 2.) PD 2.5 Watts Operating and Storage Temperature Range − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14 mH, RG = 25 Ω) EAS 567 mJ Thermal Resistance − Junction to Ambient (Note 2.) RθJA 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C 1. Negative sign for P−Channel device omitted for clarity. 2. Mounted on 2 ″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. N−C 1 2 3 4 8 7 6 5 Top View Source Source Gate Drain Drain Drain Drain D S G 1 8 3 AMPERES 30 VOLTS RDS(on) = 100 mW Device Package Shipping ORDERING INFORMATION MMSF3P03HDR2 SO−8 2500 Tape & Reel SO−8 CASE 751 STYLE 13 http://onsemi.com P−Channel LYWW MARKING DIAGRAM S3P03 L = Location Code Y = Year WW = Work Week PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. |
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