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MTB025C04H8 Fiches technique(PDF) 8 Page - Cystech Electonics Corp.

No de pièce MTB025C04H8
Description  MTB025C04H8 CYStek Product Specification
Download  13 Pages
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Fabricant  CYSTEKEC [Cystech Electonics Corp.]
Site Internet  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C955H8
Issued Date : 2015.11.02
Revised Date :
Page No. : 8/13
MTB025C04H8
CYStek Product Specification
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
0
5
10
15
20
25
30
35
40
01
23
45
-VDS, Drain-Source Voltage(V)
-10V, -9V, -8V, -7V,-6V
VGS=-2.5V
VGS=-3V
-4V
-4.5V
-3.5V
-5V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
-ID, Drain Current(A)
VGS=-4V
VGS=-3V
VGS=-10V
VGS=-4.5V
Source Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
024
68
-IS, Source Drain Current(A)
10
VGS=0V
Tj=25°C
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
20
40
60
80
100
120
140
160
180
200
02
4
68
10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-10V, ID=-12A
RDS(ON)@Tj=25°C : 28.3mΩ
-VGS, Gate-Source Voltage(V)
ID=-12A
 


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