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LMH6522 Fiches technique(PDF) 2 Page - Texas Instruments |
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LMH6522 Fiches technique(HTML) 2 Page - Texas Instruments |
2 / 34 page 26 dB OUTB+ OUTB- +5V INB+ INB- 26 dB INC+ INC- OUTC+ OUTC- Attenuator 0 dB to 31 dB Attenuator 0 dB to 31 dB ATTEN_A EN_A SPI ATTEN_D EN_D 5 Digital Control, (Serial or Parallel) 4 5 GND 26 dB OUTA+ OUTA- INA+ INA- Attenuator 0 dB to 31 dB 26 dB OUTD+ OUTD- IND+ IND- Attenuator 0 dB to 31 dB ATTEN_B EN_B ATTEN_C EN_C 5 5 MODE LMH6522 SNOSB53D – JULY 2011 – REVISED MARCH 2013 www.ti.com Block Diagram These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: LMH6522 |
Numéro de pièce similaire - LMH6522 |
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Description similaire - LMH6522 |
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