BCW69LT1 datasheet(6/8 Pages) ONSEMI

No de pièce	BCW69LT1

Description	General Purpose Transistors

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BCW69LT1

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6

TJ, JUNCTION TEMPERATURE (°C)

104

−4

0

Figure 15. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model

as shown in Figure 16. Using the model and the device thermal

response the normalized effective transient thermal resistance of

Figure 14 was calculated for various duty cycles.

To find ZθJA(t), multiply the value obtained from Figure 14 by the

steady state value RθJA.

Example:

Dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of

r(t) is 0.22.

The peak rise in junction temperature is therefore

ΔT = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN−569.

10−2

10−1

100

101

102

103

−2

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

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