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SS10P3C Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SS10P3C Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page SS10P3C, SS10P4C www.vishay.com Vishay General Semiconductor Revision: 10-Dec-14 1 Document Number: 89035 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Barrier Rectifiers TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling diodes, DC/DC converters, and polarity protection application. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 30 V, 40 V IFSM 200 A EAS 20 mJ VF at IF = 5 A 0.37 V TJ max. 150 °C Package TO-277A Diode variations Single TO-277A (SMPC) K 2 1 Anode 1 Anode 2 Cathode K eSMP® Series Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10P3C SS10P4C UNIT Device marking code S103C S104C Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum average forward rectified current (fig. 1) total device IF(AV) 10 A per diode 5.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode EAS 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +150 °C |
Numéro de pièce similaire - SS10P3C_15 |
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Description similaire - SS10P3C_15 |
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