Moteur de recherche de fiches techniques de composants électroniques |
|
MTV6N100E Fiches technique(PDF) 3 Page - ON Semiconductor |
|
MTV6N100E Fiches technique(HTML) 3 Page - ON Semiconductor |
3 / 11 page MTV6N100E http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS 1000 — — 1270 — — Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 1000 Vdc, VGS = 0 Vdc) (VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 μAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 — 3.0 7.0 4.0 — Vdc mV/°C Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc) RDS(on) — 1.28 1.5 Ohm Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 6.0 Adc) (VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C) VDS(on) — — 7.9 — 14.4 9.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc) gFS 4.0 7.2 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 3000 4210 pF Output Capacitance Coss — 219 440 Transfer Capacitance Crss — 43 90 SWITCHING CHARACTERISTICS (2) Turn−On Delay Time (VDD = 500 Vdc, ID = 6.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) — 27 45 ns Rise Time tr — 29 65 Turn−Off Delay Time td(off) — 93 170 Fall Time tf — 43 95 Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 6.0 Adc, VGS = 10 Vdc) QT — 66 100 nC Q1 — 12.5 — Q2 — 25.9 — Q3 — 26 — SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.81 0.64 1.0 — Vdc Reverse Recovery Time (IS = 6.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr — 735 — ns ta — 188 — tb — 547 — Reverse Recovery Stored Charge QRR — 4.7 — μC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD — 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 13 — nH (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
Numéro de pièce similaire - MTV6N100E |
|
Description similaire - MTV6N100E |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |