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MTB9N25E Fiches technique(PDF) 8 Page - ON Semiconductor |
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MTB9N25E Fiches technique(HTML) 8 Page - ON Semiconductor |
8 / 12 page MTB9N25E http://onsemi.com 8 SAFE OPERATING AREA Figure 14. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 0 0.5 1 1.5 2.0 2.5 3 25 50 75 100 125 1 TA, AMBIENT TEMPERATURE (°C) Figure 15. D2PAK Power Derating Curve RθJA = 50°C/W Board material = 0.065 mil FR−4 Mounted on the minimum recommended footprint Collector/Drain Pad Size ≈ 450 mils x 350 mils Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 13. Thermal Response TJ, STARTING JUNCTION TEMPERATURE (°C) 0.1 1.0 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0 25 50 75 100 125 50 ID = 9 A 10 10 1 25 100 75 125 1000 VGS = 20 V SINGLE PULSE TC = 25°C 10 μs 100 μs 1ms 10ms dc RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE D = 0.5 0.00001 0.0001 0.01 0.1 1.0 0.01 0.001 0.1 10 1.0 t, TIME (s) |
Numéro de pièce similaire - MTB9N25E |
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Description similaire - MTB9N25E |
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