BC817-40WT1G datasheet(3/5 Pages) ONSEMI

No de pièce	BC817-40WT1G

Description	General Purpose NPN Transistor

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BC817−40W

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain vs. Collector

Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0

100

200

300

400

700

1

0.1

0.01

0.001

0.1

1

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

Figure 4. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

1

VCE = 1 V

150

°C

−55

°C

25

°C

IC/IB = 10

150

°C

−55

°C

25

°C

0.4

0.9

IC/IB = 10

150

°C

−55

°C

25

°C

0.4

0.7

1.1

VCE = 5 V

150

°C

−55

°C

25

°C

Figure 5. Current Gain Bandwidth Product vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

1000

10

1

0.1

10

100

VCE = 1 V

TA = 25°C

1000

100

500

600

0.01

Numéro de pièce similaire - BC817-40WT1G

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	BC817-40WT1G	68Kb / 5P	General Purpose NPN Transistor May, 2016 ??Rev. 2

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