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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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TPS62110 Fiches technique(PDF) 6 Page - Texas Instruments |
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TPS62110 Fiches technique(HTML) 6 Page - Texas Instruments |
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6 / 34 page  TPS62110, TPS62111, TPS62112, TPS62113 SLVS585E – JULY 2005 – REVISED JUNE 2015 www.ti.com 8.5 Electrical Characteristics VI = 12 V, VO = 3.3 V, IO = 600 mA, EN = VI, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VI Input voltage 3.1 17 V IO = 0 mA, SYNC = GND, VI = 7.2 V, 20 TA = 25°C (1) I(Q) Operating quiescent current µA IO = 0 mA, SYNC = GND, VI = 17 V (1) 23 26 Quiescent current with enhanced LBI IQ(LBI) EN = VI , LBI = GND 10 µA comparator version (TPS62113 only). EN = GND 1.5 5 I(SD) Shutdown current µA EN = GND, TA = 25°C, VI = 7.2 V 1.5 3 ENABLE VIH EN high-level input voltage 1.3 V VIL EN low-level input voltage 0.3 V EN trip-point hysteresis 170 mV Ilkg EN input leakage current EN = GND or VI, VI = 12 V 0.01 0.2 µA I(EN) EN input current 0.6 V ≤ V(EN) ≤ 4 V 10 20 µA V(UVLO) Undervoltage lockout threshold Input voltage falling 2.8 3 3.1 V Undervoltage lockout hysteresis 250 300 mV POWER SWITCH VI ≥ 5.4 V; IO = 350 mA 165 250 RDS(ON) P-channel MOSFET ON-resistance VI = 3.5 V; IO = 200 mA 340 m Ω VI = 3 V; IO = 100 mA 490 Ilkg P-channel MOSFET leakage current VDS = 17 V 0.1 1 µA ILIMF P-channel MOSFET current limit VI = 7.2 V, VO = 3.3 V 2100 2400 2600 mA VI ≥ 5.4 V; IO = 350 mA 145 200 RDS(ON) N-channel MOSFET ON-resistance VI = 3.5 V; IO = 200 mA 170 m Ω VI = 3 V; IO = 100 mA 200 Ilkg N-channel MOSFET leakage current VDS = 17 V 0.1 2 µA PG OUTPUT, LBI, LBO V(PG) Power good trip voltage VO – 1.6% V VO ramping positive 50 Power good delay time µs VO ramping negative 200 VOL PG, LBO output-low voltage V(FB) = 0.8 × VO nominal, IOL = 1 mA 0.3 V IOL PG, LBO sink current 1 mA Ilkg PG, LBO output leakage current V(FB) = VO nominal, V(LBI) = VI 0.01 0.25 µA Minimum supply voltage for valid power 3 V good, LBI, LBO signal VLBI LBI input trip voltage Input voltage falling 1.256 V Ilkg LBI input leakage current 10 100 nA LBI input trip-point 1.5% accuracy VLBI,HYS Low-battery input hysteresis 25 mV (1) Device is not switching. 6 Submit Documentation Feedback Copyright © 2005–2015, Texas Instruments Incorporated Product Folder Links: TPS62110 TPS62111 TPS62112 TPS62113 |
Numéro de pièce similaire - TPS62110_15 |
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Description similaire - TPS62110_15 |
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