SI4559ADY datasheet(9/15 Pages) TFUNK

No de pièce	SI4559ADY

Description	N- and P-Channel 60-V (D-S) MOSFET

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Document Number: 73624

S09-0393-Rev. B, 09-Mar-09

www.vishay.com

9

Vishay Siliconix

Si4559ADY

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

20

10

1

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0

2468

10

ID = 3.1 A

VGS - Gate-to-Source Voltage (V)

0

30

10

20

Time (s)

40

1

600

10

10-1

10-3

50

100

10-2

Safe Operating Area, Junction-to-Case

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

P(t) = 10

DC

ID(on)

Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

IDM Limited

Limited

by RDS(on)*

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

>

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