SI2318CD datasheet(4/10 Pages) TFUNK

No de pièce	SI2318CD

Description	N-Channel 40 V (D-S) MOSFET

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Document Number: 67030

S10-2250-Rev. A, 04-Oct-10

Vishay Siliconix

Si2318CDS

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0

0.3

0.6

0.9

1.2

TJ = 25 °C

TJ = 150 °C

V

SD - Source-to-Drain Voltage (V)

1.0

1.2

1.4

1.6

1.8

2.0

- 50

- 25

0

25

50

75

100

125

150

ID = 250 μA

T

J - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.02

0.04

0.06

0.08

0.10

246

8

10

TJ = 25 °C

TJ = 125 °C

ID =4.3 A

V

GS - Gate-to-Source Voltage (V)

0

8

16

24

32

0.001

0.01

0.1

1

10

100

Time (s)

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

1s,10s

Limited by RDS(on)*

BVDSS Limited

1ms

100 μs

10 ms

DC

100 ms

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI2318DS	79Kb / 4P	N-Channel 40-V (D-S) MOSFET Rev. A, 18-Aug-03
	SIRA58DP	409Kb / 13P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
	SUM90N04-3M3P	185Kb / 8P	N-Channel 40 V (D-S) MOSFET Rev. B, 02-Dec-13
Analog Power	AM2340N	326Kb / 5P	N-Channel 40-V (D-S) MOSFET
Analog Power	AM90N04-01P	315Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI7156DP	108Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. B, 09-Feb-09
Vishay Siliconix	SISS10DN	330Kb / 9P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
Analog Power	AM2344N	313Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI2318CDS	236Kb / 10P	N-Channel 40 V (D-S) MOSFET Rev. A, 04-Oct-10
	SI4154DY	91Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. A, 01-Jun-09
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