SI2318CD datasheet(1/10 Pages) TFUNK

No de pièce	SI2318CD

Description	N-Channel 40 V (D-S) MOSFET

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Vishay Siliconix

Si2318CDS

Document Number: 67030

S10-2250-Rev. A, 04-Oct-10

www.vishay.com

1

New Product

N-Channel 40 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

Qg (Typ.)

40

0.042 at VGS = 10 V

5.6

2.9 nC

0.051 at VGS = 4.5 V

5.1

Marking Code

P9

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si2318CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

G

S

D

Top View

2

3

SOT-23

1

(3)

(2)

(1)

Notes:

a. Based on TC = 25 °C

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

5.6a

A

TC = 70 °C

4.5

TA = 25 °C

4.3b, c

TA = 70 °C

3.5b, c

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.75

TA = 25 °C

1.04b, c

Maximum Power Dissipation

TC = 25 °C

PD

2.1

W

TC = 70 °C

1.3

TA = 25 °C

1.25b, c

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

 5 s

RthJA

80

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

60

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converters

•

Load Switch

•

Portable and Consumer Applications

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