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SIZ918DT Fiches technique(PDF) 2 Page - Vishay Telefunken |
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SIZ918DT Fiches technique(HTML) 2 Page - Vishay Telefunken |
2 / 14 page www.vishay.com 2 Document Number: 63783 S12-0543 Rev. A, 12-Mar-12 Vishay Siliconix SiZ918DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For more information please contact: pmostechsupport@vishay.com Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA Ch-1 30 V VGS = 0 V, ID = 250 µA Ch-2 30 VDS Temperature Coefficient V DS/TJ ID = 250 µA Ch-1 33 mV/°C ID = 250 µA Ch-2 37 VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 µA Ch-1 - 5 ID = 250 µA Ch-2 - 7.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1 2.2 V VDS = VGS, ID = 250 µA Ch-2 1.2 2.2 Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 ± 100 nA Ch-2 ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 1 µA VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 5 On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V Ch-1 20 A VDS 5 V, VGS = 10 V Ch-2 20 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 13.8 A Ch-1 0.0100 0.0120 VGS = 10 V, ID = 20 A Ch-2 0.0030 0.0037 VGS = 4.5 V, ID = 12.6 A Ch-1 0.0120 0.0145 VGS = 4.5 V, ID = 20 A Ch-2 0.0035 0.0045 Forward Transconductanceb gfs VDS = 10 V, ID = 13.8 A Ch-1 47 S VDS = 10 V, ID = 20 A Ch-2 116 Dynamica Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 790 pF Ch-2 3830 Output Capacitance Coss Ch-1 190 Ch-2 670 Reverse Transfer Capacitance Crss Ch-1 76 Ch-2 315 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 13.8 A Ch-1 14 21 nC VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 67.3 105 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 13.8 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 6.8 11 Ch-2 32 48 Gate-Source Charge Qgs Ch-1 2.6 Ch-2 10.8 Gate-Drain Charge Qgd Ch-1 1.9 Ch-2 9.3 Gate Resistance Rg f = 1 MHz Ch-1 0.4 2 4 Ch-2 0.2 1.1 2.2 |
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