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SI4816BD Fiches technique(PDF) 2 Page - Vishay Telefunken |
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SI4816BD Fiches technique(HTML) 2 Page - Vishay Telefunken |
2 / 13 page www.vishay.com 2 Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 Vishay Siliconix Si4816BDY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1.0 3.0 V Ch-2 1.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V Ch-1 100 nA Ch-2 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 1 µA Ch-2 100 VDS = 30 V, VGS = 0 V, TJ = 85 °C Ch-1 15 Ch-2 2000 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch-1 20 A Ch-2 30 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 6.8 A Ch-1 0.0155 0.0185 Ω VGS = 10 V, ID = 11.4 A Ch-2 0.0093 0.0115 VGS = 4.5 V, ID = 6.0 A Ch-1 0.0185 0.0225 VGS = 4.5 V, ID = 9.5 A Ch-2 0.013 0.016 Forward Transconductanceb gfs VDS = 15 V, ID = 6.8 A Ch-1 30 S VDS = 15 V, ID = 11.4 A Ch-2 31 Diode Forward Voltageb VSD IS = 1 A, VGS = 0 V Ch-1 0.73 1.1 V IS = 1 A, VGS = 0 V Ch-2 0.47 0.5 Dynamica Total Gate Charge Qg Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.8 A Channel-2 VDS = 15 V, VGS = 5 V, ID = - 11.4 A Ch-1 7.8 10 nC Ch-2 11.6 18 Gate-Source Charge Qgs Ch-1 2.9 Ch-2 4.8 Gate-Drain Charge Qgd Ch-1 2.3 Ch-2 3.7 Gate Resistance Rg Ch-1 1.5 3.0 4.5 Ω Ch-2 0.9 1.8 2.7 Turn-On Delay Time td(on) Channel-1 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Ch-1 11 17 ns Ch-2 13 20 Rise Time tr Ch-1 9 15 Ch-2 9 15 Turn-Off Delay Time td(off) Ch-1 24 40 Ch-2 31 50 Fall Time tf Ch-1 9 15 Ch-2 11 17 Source-Drain Reverse Recovery Time trr IF = 1.3 A, dI/dt = 100 A/µs Ch-1 20 35 IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 25 40 |
Numéro de pièce similaire - SI4816BD |
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Description similaire - SI4816BD |
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