SI3410DV datasheet(1/11 Pages) TFUNK

No de pièce	SI3410DV

Description	N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si3410DV

Document Number: 69254

S09-2110-Rev. B, 12-Oct-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook Load Switch

•

Low Current dc-to-dc

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.0195 at VGS = 10 V

8

9.2 nC

0.023 at VGS = 4.5 V

8

Notes:

a. Package Limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

8a

A

TC = 70 °C

8a

TA = 25 °C

7.5b,c

TA = 70 °C

5.9b,c

Pulsed Drain Current

IDM

30

Continuous Source-Drain Diode Current

TC = 25 °C

IS

2.7

TA = 25 °C

1.7b,c

Maximum Power Dissipation

TC = 25 °C

PD

4.1

W

TC = 70 °C

2.6

TA = 25 °C

2b,c

TA = 70 °C

1.25b,c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

45

62.5

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

25

30

Marking Code

AM

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free)

Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

TSOP-6

Top View

6

4

1

2

3

5

3 mm

2.85 mm

D

S

G

(1, 2, 5, 6)

(3)

(4)

Numéro de pièce similaire - SI3410DV

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI3410DV	142Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. A, 08-Oct-07
	SI3410DV	195Kb / 11P	N-Channel 30-V (D-S) MOSFET Rev. B, 12-Oct-09
	SI3410DV-T1-E3	142Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. A, 08-Oct-07
VBsemi Electronics Co.,...	SI3410DV-T1-GE3	486Kb / 9P	N-Channel 30 V (D-S) MOSFET
Vishay Siliconix	SI3410DV	195Kb / 11P	N-Channel 30-V (D-S) MOSFET Rev. B, 12-Oct-09

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Description similaire - SI3410DV

Fabricant	No de pièce	Fiches technique	Description
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Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
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SI3410DV Fiches technique(PDF) 1 Page - Vishay Telefunken

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