SI1028X datasheet(1/8 Pages) TFUNK

No de pièce	SI1028X

Description	Dual N-Channel 30 V (D-S) MOSFET

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Vishay Siliconix

Si1028X

Document Number: 63862

S12-1956-Rev. B, 13-Aug-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

ESD Protected: 550 V Typical HBM

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

BENEFITS

•

Low Offset Voltage

•

Low-Voltage Operation

•

High-Speed Circuits

•

Small Board Area

APPLICATIONS

•

Load/Signal Switching for Portable Devices

•

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

•

Battery Operated Systems

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

Qg (Typ.)

30

0.650 at VGS = 10 V

0.48

0.5

0.770 at VGS = 4.5 V

0.45

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

0.48a, b

A

TA = 70 °C

0.45a, b

Pulsed Drain Current (t = 300 µs)

IDM

1

Continuous Source-Drain Diode Current

TA = 25 °C

IS

0.18a, b

A

Maximum Power Dissipationa

TA = 25 °C

PD

0.22a, b

W

TA = 70 °C

0.14a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambientb

t

5 s

RthJA

470

565

°C/W

Steady State

560

675

Ordering Information: Si1028X-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

XX

G

Lot Traceability

and Date Code

Part # Code

Top View

3

1

D2

G2

S1

5

2

4

6D1

S2

G1

SC-89

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