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SI1016CX Fiches technique(PDF) 1 Page - Vishay Telefunken

No de pièce SI1016CX
Description  Complementary N- and P-Channel 20 V (D-S) MOSFET
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Fabricant  TFUNK [Vishay Telefunken]
Site Internet  http://www.vishay.com
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SI1016CX Fiches technique(HTML) 1 Page - Vishay Telefunken

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Si1016CX
www.vishay.com
Vishay Siliconix
S14-1174-Rev. C, 09-Jun-14
1
Document Number: 67535
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Complementary N- and P-Channel 20 V (D-S) MOSFET
Marking Code: 5
Ordering Information:
Si1016CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFETs
• High-side switching
• Ease in driving switches
• Low offset (error) voltage
• Low-voltage operation
• High-speed circuits
• Typical ESD protection:
n-channel 900 V, p-channel 900 V (HBM)
• 100 % Rg tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Load switch, small signal switches and level-shift
switches
- Battery operated systems
- Portable
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 675 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) (
Ω)ID (A) Qg (TYP.)
N-Channel
20
0.396 at VGS = 4.5 V
0.50
0.75 nC
0.456 at VGS = 2.5 V
0.20
0.546 at VGS = 1.8 V
0.20
0.760 at VGS = 1.5 V
0.05
P-Channel
-20
0.756 at VGS = -4.5 V
-0.35
1 nC
1.038 at VGS = -2.5 V
-0.35
1.440 at VGS = -1.8 V
-0.10
2.400 at VGS = -1.5 V
-0.05
Top View
SC-89 Dual (6 leads)
1
S
1
2
G
1
3
D
2
D
1
6
G
2
5
S
2
4
P-Channel MOSFET
N-Channel MOSFET
D2
S2
G2
S1
D1
G1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
0.6 a, b
-0.6 a, b
A
TA = 70 °C
0.49 a, b
-0.49 a, b
Pulsed Drain Current (t = 300 μs)
IDM
2-1.5
Source Drain Current Diode Current
TA = 25 °C
IS
0.18 a, b
-0.18 a, b
Maximum Power Dissipation
TA = 25 °C
PD
0.22 a, b
0.22 a, b
W
TA = 70 °C
0.14 a, b
0.14 a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum Junction-to-Ambient a, c
t
≤ 5 s
RthJA
470
565
470
565
°C/W
Steady State
560
675
560
675


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