UF830K-MT datasheet(1/7 Pages) UTC

No de pièce	UF830K-MT

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UF830K-MT

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R209-030.D

4.5A, 500V, 1.5Ω, N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC UF830K-MT is a N-Channel enhancement mode

silicon gate power MOSFET is designed high voltage, high speed

power switching applications such as switching regulators,

switching converters, solenoid, motor drivers, relay drivers.



FEATURES

* RDS(ON) < 1.50Ω @ VGS = 10V, ID = 2.5 A

* Single Pulse Avalanche Energy Rated

* Rugged- SOA is Power Dissipation Limited

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

UF830KL-TA3-T

UF830KG-TA3-T

TO-220

G

D

S

Tube

UF830KL-TF3-T

UF830KG-TF3-T

TO-220F

G

D

S

Tube

UF830KL-TF1-T

UF830KG-TF1-T

TO-220F1

G

D

S

Tube

UF830KL-TF2-T

UF830KG-TF2-T

TO-220F2

G

D

S

Tube

UF830KL-TF3T-T

UF830KG-TF3T-T

TO-220F3

G

D

S

Tube

UF830KL-TM3-T

UF830KG-TM3-T

TO-251

G

D

S

Tube

UF830KL-TMS-T

UF830KG-TMS-T

TO-251S

G

D

S

Tube

UF830KL-TMS2-T

UF830KG-TMS2-T

TO-251S2

G

D

S

Tube

UF830KL-TMS4-T

UF830KG-TMS4-T

TO-251S4

G

D

S

Tube

UF830KL-TN3-R

UF830KG-TN3-R

TO-252

G

D

S

Tape Reel

UF830KL-TND-R

UF830KG-TND-R

TO-252D

G

D

S

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source

Numéro de pièce similaire - UF830K-MT

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	UF830K	256Kb / 6P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	UF830KG-TA3-T	256Kb / 6P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	UF830KG-TF2-T	256Kb / 6P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	UF830KG-TF3-T	256Kb / 6P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	UF830KG-TN3-R	256Kb / 6P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description similaire - UF830K-MT

Fabricant	No de pièce	Fiches technique	Description
Diodes Incorporated	BS870	63Kb / 2P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS11302 Rev. G-2
	BSS123W	67Kb / 3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30368 Rev. 2 - 2
	DT453N	73Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS11608 Rev. C-4
NXP Semiconductors	BSH121	297Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-14 August 2000
NXP Semiconductors	PH8230	214Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-23 June 2003
Unisonic Technologies	2N7002	148Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Chino-Excel Technology	CEP13N10	98Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP50N06	391Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP65A3	101Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP80N75	400Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP658N	491Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

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UF830K-MT Fiches technique(PDF) 1 Page - Unisonic Technologies

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