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BTA12A Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce BTA12A
Description  12A TRIACS
Download  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BTA12A Fiches technique(HTML) 2 Page - Unisonic Technologies

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BTA12A
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R401-053.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current (Full Sine Wave) TC=90°C
IT(RMS)
12
A
F=50 Hz
t=20ms
120
A
Non Repetitive Surge Peak
On-State Current (Full Cycle,
TJ initial=25°C)
F=60 Hz
t=16.7ms
ITSM
126
A
I
2t Value for Fusing
tP=10ms
I
2t
78
A
2s
Critical Rate of Rise of
On-State Current IG=2xIGT,
tr≤100ns
F=120 Hz TJ=125°C
dI/dt
50
A/µs
Non Repetitive Surge Peak
Off-State Voltage
tP=10ms
TJ=25°C
VDSM/VRSM
VDRM/VRRM+100
V
Peak Gate Current
tP=20µs
TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
2.3
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified)
FOR SNUBBERLESS TYPE and LOGIC LEVEL TYPE (3 QUADRANTS
TW
SW
CW
BW
PARAMETER SYMBOL
TEST
CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
UNIT
Gate Trigger
Current
(Note 1)
IGT
I-II-III
5
10
35
50
mA
Gate Trigger
Voltage
VGT
VD=12V,
RL=30Ω
I-II-III
1.3
1.3
1.3
1.3
V
Gate
Non-Trigger
Voltage
VGD
VD=VDRM,
RL=3.3kΩ,
TJ=125°C
I-II-III
0.2
0.2
0.2
0.2
V
Holding Current
(Note 2)
IH
IT=100mA
10
15
35
50
mA
I-III
10
25
50
70
mA
Latching
Current
IL
IG=1.2IGT
II
15
30
60
80
mA
Critical Rate of
Rise of
Off-State
Voltage
(Note 2)
dV/dt
VD=67%VDRM,
Gate Open,
TJ=125°C
20
40
500
1000
V/μs
(dV/dt)c=0.1V/µs,
TJ=125°C
3.5
6.5
(dV/dt)c=10V/µs,
TJ=125°C
1
2.9
Critical Rate of
Rise of
Off-State
Voltage at
Commutation
(Note 2)
(dI/dt)c
Without Snubber
TJ=125°C
6.5
12
A/ms
Note: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.


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