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4N65KL-TND-R Fiches technique(PDF) 3 Page - Unisonic Technologies |
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4N65KL-TND-R Fiches technique(HTML) 3 Page - Unisonic Technologies |
3 / 7 page 4N65K-TA Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R205-039.b ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous ID 4.0 A Drain Current Pulsed (Note2) IDM 16 A Avalanche Energy Single Pulsed (Note3) EAS 150 mJ Peak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/ns TO-220/TO-262 106 W TO-220F 34 W TO-220F1/TO-220F2 TO-220F3 36 W TO-251/TO-251S TO-251S2/ TO-251S4 TO-252/TO-252D 50 W Power Dissipation TO-126 PD 45 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=18.75mH, IAS=4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3/TO-262 62.5 °C/W TO-251/TO-251S TO-251S2/ TO-251S4 TO-252/TO-252D 110 °C/W Junction to Ambient TO-126 θJA 89 °C/W TO-220 1.18 °C/W TO-220F/TO-220F1 3.47 °C/W TO-220F3 3.67 °C/W TO-220F2 3.57 °C/W TO-251/TO-251S TO-251S2/ TO-251S4 TO-252/TO-252D 2.5 °C/W TO-262 1.18 °C/W Junction to Case TO-126 θJC 2.7 °C/W |
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Description similaire - 4N65KL-TND-R |
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