4N70K-TA

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

7 of 7

www.unisonic.com.tw

QW-R205-040.B



TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

0

200

0

400

1

0

0

50

Drain Current vs.

Gate Threshold Voltage

2

100

150

200

250

300

50

100

150

200

250

300

600 800 1000 1200 1400

3

45

6

7

0

Continuous Drain-Source Diode

Forward Current vs.

Source to Drain Voltage

0

1

2

6

200

0

Drain-Source On-State Resistance

Characteristics

0

24

8

6

0.5

400 600 800 1000 1200 1400

3

4

5

1.0

1.5

2.0

2.5

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.