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4N60KG-TN3-R Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce 4N60KG-TN3-R
Description  N-CHANNEL JUNCTIN SILICON FET
Download  7 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N60KG-TN3-R Fiches technique(HTML) 3 Page - Unisonic Technologies

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4N60K-MT
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R502-B30.e
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
210
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
106
TO-220F/TO-220F1
TO-220F2/TO-220F3
36
Power Dissipation
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
PD
50
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.25mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
62.5
°C/W
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
θJA
110
°C/W
TO-220
1.18
°C/W
TO-220F/TO-220F1
TO-220F3
3.47
°C/W
TO-220F2
3.4
°C/W
Junction to Case
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
θJC
2.50
°C/W


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