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1N50AG-TM3-T Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce 1N50AG-TM3-T
Description  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Download  5 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

1N50AG-TM3-T Fiches technique(HTML) 2 Page - Unisonic Technologies

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1N50A
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R205-030.a
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
1 (Note 2)
A
Pulsed (Note 3)
IDM
4 (Note 2)
A
Avalanche Energy
Single Pulsed (Note 4)
EAS
40
mJ
Power Dissipation
PD
25
W
Derate above 25°C
0.2
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 80mH, IAS = 1A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
5. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Junction to Case
θJC
5
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
500
V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+30V, VDS=0V
+100 nA
Reverse
VGS=-30V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.5A
6.8
8.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
125 290
pF
Output Capacitance
COSS
17
35
pF
Reverse Transfer Capacitance
CRSS
15
20
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
32
40
ns
Rise Time
tR
17
35
ns
Turn-OFF Delay Time
tD(OFF)
54
70
ns
Fall-Time
tF
18
32
ns
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
9
15
nC
Gate to Source Charge
QGS
3
nC
Gate to Drain Charge
QGD
0.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
1
A
Maximum Body-Diode Pulsed Current
ISM
4
A
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
1.15
V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature


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