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6N70Z Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce 6N70Z
Description  N-CHANNEL POWER MOSFET
Download  6 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N70Z Fiches technique(HTML) 3 Page - Unisonic Technologies

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6N70Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-A02. a
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
700
V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA
0.79
V/°C
Drain-Source Leakage Current
IDSS
VDS=700V
25
µA
VDS=560V, TC=125°C
250
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
5
µA
Reverse
VGS=-20V, VDS=0V
-5
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA, VDS=5V
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A (Note 1)
1.65
1.9
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
f=1.0MHz (Note 1, 2)
900 1200
pF
Output Capacitance
COSS
90
115
pF
Reverse Transfer Capacitance
CRSS
18
55
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
VGS=0~10V
40
70
ns
Rise Time
tR
65
90
ns
Turn-OFF Delay Time
tD(OFF)
140
165
ns
Fall-Time
tF
60
85
ns
Total Gate Charge
QG
VDD=50V, IG=100μA,
ID=1.3A (Note 1, 2)
26
30
nC
Gate to Source Charge
QGS
6.9
nC
Gate to Drain Charge
QGD
6.4
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Integral reverse pn-diode in
the MOSFET
6
A
Maximum Body-Diode Pulsed Current
(Note 3)
ISM
24
A
Drain-Source Diode Forward Voltage
(Note 2)
VSD
IS=6A, VGS=0V, TJ = 25°C
1.4
V
Body Diode Reverse Recovery Time
trr
IF=6A, dIF/dt=100A/µs,
TJ = 25°C
440
ns
Body Diode Reverse Recovery Charge
QRR
4.05
µC
Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature


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