Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

4N60L-T2Q-T Fiches technique(PDF) 5 Page - Unisonic Technologies

No de pièce 4N60L-T2Q-T
Description  N-CHANNEL POWER MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N60L-T2Q-T Fiches technique(HTML) 5 Page - Unisonic Technologies

  4N60L-T2Q-T Datasheet HTML 1Page - Unisonic Technologies 4N60L-T2Q-T Datasheet HTML 2Page - Unisonic Technologies 4N60L-T2Q-T Datasheet HTML 3Page - Unisonic Technologies 4N60L-T2Q-T Datasheet HTML 4Page - Unisonic Technologies 4N60L-T2Q-T Datasheet HTML 5Page - Unisonic Technologies 4N60L-T2Q-T Datasheet HTML 6Page - Unisonic Technologies 4N60L-T2Q-T Datasheet HTML 7Page - Unisonic Technologies 4N60L-T2Q-T Datasheet HTML 8Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 5 / 8 page
background image
4N60-N
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
5 of 8
www.unisonic.com.tw
QW-R502-971.B
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30V, VDS = 0V
100
nA
Reverse
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
2.1
2.5
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
530 630
pF
Output Capacitance
COSS
70
90
pF
Reverse Transfer Capacitance
CRSS
25
40
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 300V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
35
55
ns
Turn-On Rise Time
tR
70
110
ns
Turn-Off Delay Time
tD(OFF)
190
240
ns
Turn-Off Fall Time
tF
100
130
ns
Total Gate Charge
QG
VDS= 480V,ID= 4.0A,
VGS= 10V (Note 1, 2)
80
nC
Gate-Source Charge
QGS
5
nC
Gate-Drain Charge
QGD
9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 4.4A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
4.4
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
VGS = 0 V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
250
ns
Reverse Recovery Charge
QRR
1.5
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature


Numéro de pièce similaire - 4N60L-T2Q-T

FabricantNo de pièceFiches techniqueDescription
logo
Unisonic Technologies
4N60L-T2Q-T UTC-4N60L-T2Q-T Datasheet
376Kb / 8P
   4A, 600V N-CHANNEL POWER MOSFET
4N60L-T2Q-T UTC-4N60L-T2Q-T Datasheet
408Kb / 9P
   4A, 600V N-CHANNEL POWER MOSFET
4N60L-T2Q-T UTC-4N60L-T2Q-T Datasheet
432Kb / 9P
   N-CHANNEL ENHANCEMENT MODE MOSFET
4N60L-T2Q-T UTC-4N60L-T2Q-T Datasheet
262Kb / 7P
   N-CHANNEL JUNCTIN SILICON FET
4N60L-T2Q-T UTC-4N60L-T2Q-T Datasheet
262Kb / 7P
   N-CHANNEL POWER MOSFET
More results

Description similaire - 4N60L-T2Q-T

FabricantNo de pièceFiches techniqueDescription
logo
AiT Semiconductor Inc.
BSS123L AITSEMI-BSS123L Datasheet
486Kb / 5P
   MOSFET N-CHANNEL POWER MOSFET
REV1.0
logo
Fairchild Semiconductor
SSF7N90A FAIRCHILD-SSF7N90A Datasheet
249Kb / 8P
   N-CHANNEL POWER MOSFET
FQH90N15 FAIRCHILD-FQH90N15_06 Datasheet
1Mb / 10P
   N-Channel Power MOSFET
SSH8N80A FAIRCHILD-SSH8N80A Datasheet
249Kb / 8P
   N-CHANNEL POWER MOSFET
logo
Seme LAB
IRF450 SEME-LAB-IRF450 Datasheet
19Kb / 2P
   N-CHANNEL POWER MOSFET
IRFM450 SEME-LAB-IRFM450 Datasheet
15Kb / 2P
   N-CHANNEL POWER MOSFET
IRFN240SMD SEME-LAB-IRFN240SMD Datasheet
23Kb / 2P
   N-CHANNEL POWER MOSFET
IRF044 SEME-LAB-IRF044 Datasheet
21Kb / 2P
   N-CHANNEL POWER MOSFET
IRF140 SEME-LAB-IRF140 Datasheet
22Kb / 2P
   N-CHANNEL POWER MOSFET
2N7081220MISO SEME-LAB-2N7081220MISO Datasheet
14Kb / 2P
   N-CHANNEL POWER MOSFET
logo
Fairchild Semiconductor
SSH10N90A FAIRCHILD-SSH10N90A Datasheet
250Kb / 8P
   N-CHANNEL POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com