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4N50G-TM3-T Fiches technique(PDF) 3 Page - Unisonic Technologies |
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4N50G-TM3-T Fiches technique(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 4N50 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-525.E ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 25 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A 1.6 2.2 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 485 650 pF Output Capacitance COSS 65 90 pF Reverse Transfer Capacitance CRSS 5 8 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=4A (Note 1, 2) 11 15 nC Gate to Source Charge QGS 3 nC Gate to Drain Charge QGD 5 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=4A, RG=25Ω (Note 1, 2) 14 38 ns Rise Time tR 21 52 ns Turn-OFF Delay Time tD(OFF) 27 64 ns Fall-Time tF 20 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 4 A Maximum Body-Diode Pulsed Current ISM 16 A Drain-Source Diode Forward Voltage VSD IS=4A, VGS=0V 1.6 V Body Diode Reverse Recovery Time tRR IS=4A, VGS=0V, dIF/dt=100A/µs (Note 1) 350 ns Body Diode Reverse Recovery Charge QRR 33 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
Numéro de pièce similaire - 4N50G-TM3-T |
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Description similaire - 4N50G-TM3-T |
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