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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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3N40G-TF3-T Fiches technique(PDF) 3 Page - Unisonic Technologies |
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3N40G-TF3-T Fiches technique(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  3N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-553.d ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 400 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA 0.38 V/°C Drain-Source Leakage Current IDSS VDS=400V, VGS=0V 10 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 2.0 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 445 545 pF Output Capacitance COSS 60 80 pF Reverse Transfer Capacitance CRSS 13 16 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=10V, VDD=30V, ID=1A, RG=25Ω (Note 1, 2) 40 50 ns Rise Time tR 40 60 ns Turn-OFF Delay Time tD(OFF) 100 120 ns Fall-Time tF 60 80 ns Total Gate Charge QG VDS=100V, ID=3A, IG=3.3mA (Note 1, 2) 40 60 nC Gate to Source Charge QGS 3.6 nC Gate to Drain Charge QGD 9.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 3.0 A Maximum Body-Diode Pulsed Current ISM 12 A Drain-Source Diode Forward Voltage VSD IS=3A, VGS=0V 1.5 V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
Numéro de pièce similaire - 3N40G-TF3-T |
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Description similaire - 3N40G-TF3-T |
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