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TC4426 Fiches technique(PDF) 2 Page - Microchip Technology |
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TC4426 Fiches technique(HTML) 2 Page - Microchip Technology |
2 / 9 page 2 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 © 2001 Microchip Technology Inc. DS21422A TC4426/7/8-8 10/21/96 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150 °C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0 °C to +70°C E Version .......................................... – 40 °C to +85°C M Version ....................................... – 55 °C to +125°C Package Power Dissipation (TA ≤ 70°C) Plastic ............................................................. 730mW CerDIP ............................................................800mW SOIC ...............................................................470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current 0V ≤ V IN ≤ V DD – 1 — 1 µA Output VOH High Output Voltage VDD – 0.025 — — V VOL Low Output Voltage — — 0.025 V RO Output Resistance VDD = 18V, IO = 10mA — 7 10 Ω IPK Peak Output Current Duty Cycle ≤ 2%, t ≤ 30µsec — 1.5 — A IREV Latch-Up Protection Duty Cycle ≤ 2% > 0.5 — — A Withstand Reverse Current t ≤ 30 µsec Switching Time (Note 1) tR Rise Time Figure 1 — 19 30 nsec tF Fall Time Figure 1 — 19 30 nsec tD1 Delay Time Figure 1 — 20 30 nsec tD2 Delay Time Figure 1 — 40 50 nsec Power Supply IS Power Supply Current VIN = 3V (Both Inputs) — — 4.5 mA VIN = 0V (Both Inputs) — — 0.4 mA NOTE: 1. Switching times are guaranteed by design. PIN CONFIGURATIONS TC4426 1 2 3 4 NC 5 6 7 8 OUT A OUT B NC IN A GND IN B VDD NC = NO INTERNAL CONNECTION TC4427 1 2 3 4 NC 5 6 7 8 OUT A OUT B NC IN A GND IN B TC4428 1 2 3 4 NC 5 6 7 8 OUT A OUT B NC IN A GND IN B 2,4 7,5 INVERTING 2,4 7,5 NONINVERTING VDD 2 4 DIFFERENTIAL 7 5 VDD NOTE: SOIC pinout is identical to DIP. |
Numéro de pièce similaire - TC4426 |
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Description similaire - TC4426 |
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