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TC1043 Fiches technique(PDF) 2 Page - Microchip Technology

No de pièce TC1043
Description  Linear Building Block . Low Power Voltage Reference with Dual Op Amp, Dual Comparator, and Shutdown Mode
Download  20 Pages
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Fabricant  MICROCHIP [Microchip Technology]
Site Internet  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC1043 Fiches technique(HTML) 2 Page - Microchip Technology

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TC1043
DS21347B-page 2
© 2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................6.0V
Voltage on Any Pin ........... (VSS –0.3V) to (VDD +0.3V)
Junction Temperature....................................... +150°C
Operating Temperature Range............. -40°C to +85°C
Storage Temperature Range .............. -55°C to +150°C
*Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the
device at these or any other conditions above those indi-
cated in the operation sections of the specifications is not
implied. Exposure to Absolute Maximum Rating conditions
for extended periods my affect device reliability.
TC1043 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Typical values apply at 25°C and VDD = 3V. Minimum and maximum values apply for TA =-40° to
+85°C, andVDD = 1.8V to 5.5V, unless otherwise specified.
Symbol
Parameter
Min.
Typ
Max
Units
Test Conditions
VDD
Supply Voltage
1.8
5.5
V
IQ
Supply Current Operating
16
30
µA
All outputs unloaded,
SHDN =VDD
ISHDN
Supply Current, Shutdown
6
10
µACMPTR2 and VREF Outputs
unloaded, SHDN =VSS
Shutdown Input
VIH
Input High Threshold
80% VDD
——
V
VIL
Input Low Threshold
20% VDD
V
ISI
Shutdown Input Current
±100
nA
Op Amps
TSEL
Select Time
15
µsec
(VOUT from SHDN =VIH)
RL = 10kΩ to VSS
TDESEL
Deselect Time
100
nsec
(VOUT from SHDN =VIL)
RL = 10kΩ to VSS
ROUT(SD)
Output Resistance in Shutdown
20
M
SHDN =VSS
COUT(SD)
Output Capacitance in Shutdown
6
pF
SHDN =VSS
AVOL
Large Signal Voltage Gain
100
V/mV
RL = 10kΩ,VDD =5V
VICMR
Common Mode Input Voltage Range
VSS -0.2
VDD +0.2
V
VOS
Input Offset Voltage
±100
±0.3
±500
±1.5
µV
mV
VDD =3V, VCM =1.5V, TA =
25°C, TA = -40°C to 85°C
IB
Input Bias Current
-100
50
100
pA
TA =25°C, VCM =VDD to VSS
VOS(DRIFT)
Input Offset Voltage Drift
±4
µV/°C VDD =3V, VCM =1.5V
GBWP
Gain-Bandwidth Product
90
kHz
VDD = 1.8V to 5.5V
VO =VDD to VSS
SR
Slew Rate
35
mV/
µsec
CL = 100pF
RL =1MΩ to GND
Gain = 1
VIN =VSS to VDD
VOUT
Output Signal Swing
VSS +0.05
VSS -0.05
V
RL = 10kΩ
CMRR
Common Mode Rejection Ratio
70
dB
TA =25°C, VDD =5V
VCM =VDD to VSS
PSRR
Power Supply Rejection Ratio
80
dB
TA =25°C, VCM =VSS
VDD =VDD to VSS
ISRC
Output Source Current
3
mA
IN+=VDD,IN- = VSS
Output Shorted to VSS
VDD =1.8V, Gain =1
ISINK
Output Sink Current
4
mA
IN+=VSS,IN- = VDD
Output Shorted to VDD
VDD =1.8V, Gain =1
En
Input Noise Voltage
10
µVPP 0.1Hz to 10Hz
en
Input Noise Voltage Density
125
nV/
√Hz 1kHz


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