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TPS61093-Q1 Fiches technique(PDF) 11 Page - Texas Instruments

No de pièce TPS61093-Q1
Description  TPS61093-Q1 Low Input Boost Converter With Integrated Power Diode and Input/Output Isolation
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

TPS61093-Q1 Fiches technique(HTML) 11 Page - Texas Instruments

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Load - mA
40
45
50
60
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85
90
100
95
80
75
65
55
Without isolation
With isolation
TPS61093
OUT
FB
R1
R2
Cff
Option
C4
VO
C2
OUT
FB
R1
R2
Cff
Option
VO
C2
TPS61093
(a)WithisolationFET
(b)WithoutisolationFET
R1
Vout = 0.5 V
+1
R2
Vout
R1 = R2
1
0.5 V
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TPS61093-Q1
www.ti.com
SLVSCO6 – JANUARY 2015
9.2.1.2 Detailed Design Procedure
9.2.1.2.1
Output Program
To program the output voltage, select the values of R1 and R2 (see Figure 7) according to Equation 1.
(1)
A recommended value for R2 is approximately 10-k
Ω which sets the current in the resistor divider chain to
0.5V/10k
Ω = 50-μA. The output voltage tolerance depends on the VFB accuracy and the resistor divider.
Figure 7. Resistor Divider to Program Output Voltage
9.2.1.2.2
Without Isolation FET
The efficiency of the TPS61093-Q1 can be improved by connecting the load to the VO pin instead of the OUT
pin. The power loss in the isolation FET is then negligible, as shown in Figure 8. The tradeoffs when bypassing
the isolation FET are:
Leakage path between input and output causes the output to be a diode drop below the input voltage when
the IC is in shutdown
No overload circuit protection
When the load is connected to the VO pin, the output capacitor on the VO pin should be above 1-
μF.
Figure 8. Efficiency vs. Load
Copyright © 2015, Texas Instruments Incorporated
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