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TPS61093-Q1 Fiches technique(PDF) 11 Page - Texas Instruments |
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TPS61093-Q1 Fiches technique(HTML) 11 Page - Texas Instruments |
11 / 27 page 0 50 100 150 200 250 300 Load - mA 40 45 50 60 70 85 90 100 95 80 75 65 55 Without isolation With isolation TPS61093 OUT FB R1 R2 Cff Option C4 VO C2 OUT FB R1 R2 Cff Option VO C2 TPS61093 (a)WithisolationFET (b)WithoutisolationFET R1 Vout = 0.5 V +1 R2 Vout R1 = R2 1 0.5 V æ ö ´ ç ÷ è ø æ ö ´ - ç ÷ è ø TPS61093-Q1 www.ti.com SLVSCO6 – JANUARY 2015 9.2.1.2 Detailed Design Procedure 9.2.1.2.1 Output Program To program the output voltage, select the values of R1 and R2 (see Figure 7) according to Equation 1. (1) A recommended value for R2 is approximately 10-k Ω which sets the current in the resistor divider chain to 0.5V/10k Ω = 50-μA. The output voltage tolerance depends on the VFB accuracy and the resistor divider. Figure 7. Resistor Divider to Program Output Voltage 9.2.1.2.2 Without Isolation FET The efficiency of the TPS61093-Q1 can be improved by connecting the load to the VO pin instead of the OUT pin. The power loss in the isolation FET is then negligible, as shown in Figure 8. The tradeoffs when bypassing the isolation FET are: • Leakage path between input and output causes the output to be a diode drop below the input voltage when the IC is in shutdown • No overload circuit protection When the load is connected to the VO pin, the output capacitor on the VO pin should be above 1- μF. Figure 8. Efficiency vs. Load Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: TPS61093-Q1 |
Numéro de pièce similaire - TPS61093-Q1_15 |
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Description similaire - TPS61093-Q1_15 |
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