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BF1204 Fiches technique(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1204 Fiches technique(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 12 page 2001 Apr 25 2 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 FEATURES • Two low noise gain controlled amplifiers in a single package • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio. APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment. DESCRIPTION The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. PINNING - SOT363 PIN DESCRIPTION 1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) handbook, halfpage MBL252 AMP a AMP b d (a) s d (b) g1 (a) Top view g2 g1 (b) 13 2 4 5 6 Fig.1 Simplified outline and symbol. Marking code: L3- QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the source lead. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET; unless otherwise specified VDS drain-source voltage −− 10 V ID drain current (DC) −− 30 mA Ptot total power dissipation Ts ≤ 102 °C; note 1 −− 200 mW y fs forward transfer admittance ID = 12 mA; f = 1 MHz 25 30 40 mS Cig1-s input capacitance at gate 1 ID = 12 mA; f = 1 MHz − 1.7 2.2 pF Crss reverse transfer capacitance f = 1 MHz − 15 − fF NF noise figure f = 800 MHz − 1.1 1.8 dB Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 105 − dB µV Tj operating junction temperature −− 150 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. |
Numéro de pièce similaire - BF1204_15 |
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Description similaire - BF1204_15 |
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