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BF1204 Fiches technique(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1204 Fiches technique(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
7 / 12 page 2001 Apr 25 7 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 handbook, halfpage 02 46 40 30 10 0 20 MCD960 VG2-S (V) IG1 ( µA) 4 V 3.5 V 3 V 4.5 V VGG = 5 V Fig.11 Gate 1 current as a function of gate 2 voltage; typical values. VDS = 5 V; Tj =25 °C. RG1 = 120 kΩ (connected to VGG); see Fig.19. handbook, halfpage 01 2 4 0 −50 −10 3 VAGC (V) gain reduction (dB) −20 −30 −40 MCD961 Fig.12 Typical gain reduction as a function of AGC voltage; see Fig.19. VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ; f = 50 MHz; Tamb =25 °C. handbook, halfpage 0 gain reduction (dB) 10 50 120 110 90 80 100 20 30 40 MCD962 Vunw (dB µV) Fig.13 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.19. VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ; f= 50 MHz; funw = 60 MHz; Tamb =25 °C. handbook, halfpage 0 gain reduction (dB) 10 50 16 12 4 0 8 20 30 40 MCD963 ID (mA) Fig.14 Drain current as a function of gain reduction; typical values; see Fig.19. VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ; f = 50 MHz; Tamb =25 °C. |
Numéro de pièce similaire - BF1204_15 |
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Description similaire - BF1204_15 |
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