Moteur de recherche de fiches techniques de composants électroniques |
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BAP70-03_N Fiches technique(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP70-03_N Fiches technique(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 6 page 2002 Jun 26 2 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 FEATURES • High voltage, current controlled RF resistor for attanuators • Low diode capacitance • Very low series inductance. APPLICATIONS • RF attenuators • (SAT) TV applications. DESCRIPTION Planar PIN diode in a SOD323 small plastic SMD package. PINNING PIN DESCRIPTION 1 cathode 2 anode handbook, halfpage 12 MAM406 Marking code: A9 Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 50 V IF continuous forward current − 100 mA Ptot total power dissipation Ts =90 °C − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF =50mA − 0.9 1.1 V IR reverse leakage current VR =30V −− 20 nA Cd diode capacitance VR =0V; f=1MHz − 570 − fF VR =1V; f=1MHz − 400 − fF VR =5V; f=1MHz − 270 − fF VR =20V; f=1MHz − 200 250 fF rD diode forward resistance IF =0.5 mA; f=100MHz − 77 100 Ω IF =1mA; f=100MHz − 40 50 Ω IF =10mA; f=100MHz − 5.4 7 Ω IF = 100 mA; f = 100 MHz − 1.4 1.9 Ω τ L charge carrier life time when switched from IF =10mA to IR =6mA; RL = 100 Ω; measured at IR =3mA − 1.25 −µs LS series inductance IF = 100 mA; f = 100 MHz − 1.5 − nH |
Numéro de pièce similaire - BAP70-03_N_15 |
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Description similaire - BAP70-03_N_15 |
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