2SD1060_15 datasheet(2/4 Pages) JMNIC

No de pièce	2SD1060

Description	Silicon NPN Power Transistors

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Fabricant	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Product Specification

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JMnic

Silicon NPN Power Transistors

2SD1060

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO

Collector-emitter breakdown voltage

IC=1mA ;RBE=∞

50

V

VCBO

Collector-base breakdown voltage

IC=1mA ;IE=0

60

V

VEBO

Emitter-base breakdown voltage

IE=1mA ;IC=0

6

V

VCEsat

Collector-emitter saturation voltage

IC=3A; IB=0.3A

0.4

V

ICBO

Collector cut-off current

VCB=40V;IE=0

0.1

mA

IEBO

Emitter cut-off current

VEB=4V; IC=0

0.1

mA

hFE-1

DC current gain

IC=1A ; VCE=2V

70

280

hFE-2

DC current gain

IC=3A ; VCE=2V

30

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

100

pF

fT

Transition frequency

IC=1A ; VCE=-5V

30

MHz

Switching times

ton

Turn-on time

0.1

μs

ts

Storage time

1.4

μs

tf

Fall time

IC=2.0A; IB1= IB2=0.2A

0.2

μs

hFE-1 classifications

Q

R

S

70-140

100-200

140-280

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2SD1060 Fiches technique(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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