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JANTX2N6847 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce JANTX2N6847
Description  Repetitive Avalanche Ratings
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

JANTX2N6847 Fiches technique(HTML) 2 Page - International Rectifier

  JANTX2N6847_15 Datasheet HTML 1Page - International Rectifier JANTX2N6847_15 Datasheet HTML 2Page - International Rectifier JANTX2N6847_15 Datasheet HTML 3Page - International Rectifier JANTX2N6847_15 Datasheet HTML 4Page - International Rectifier JANTX2N6847_15 Datasheet HTML 5Page - International Rectifier JANTX2N6847_15 Datasheet HTML 6Page - International Rectifier JANTX2N6847_15 Datasheet HTML 7Page - International Rectifier  
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IRFF9220
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
6.25
RthJA
Junction-to-Ambient
175
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-2.5
ISM
Pulse Source Current (Body Diode) ➀
-10
VSD
Diode Forward Voltage
-4.8
V
Tj = 25°C, IS =-2.5A, VGS = 0V ➃
trr
Reverse Recovery Time
300
nS
Tj = 25°C, IF = -2.5.A, di/dt ≤ -100A/µs
QRR
Reverse Recovery Charge
3.0
µC
VDD ≤ -50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-200
V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.22
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
1.5
VGS = -10V, ID = -1.6A ➃
Resistance
1.725
VGS =-10V, ID =-2.5A ➃
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
1.0
S ( )
VDS > -15V, IDS = -1.6A ➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS= -160V, VGS=0V
-250
µA
VDS = -160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
1 0 0
nA
VGS = 20V
Qg
Total Gate Charge
4.0
1 5
VGS =-10V, ID = -2.5A
Qgs
Gate-to-Source Charge
1.1
3.2
nC
VDS= -100V
Qgd
Gate-to-Drain (‘Miller’) Charge
0.8
8.4
td(on)
Turn-On Delay Time
5 0
VDD = -100V, ID = -2.5A,
t r
Rise Time
7 0
RG =7.5Ω
td(off)
Turn-Off Delay Time
4 0
tf
Fall Time
5 0
LS + LD
Total Inductance
7.0
Ciss
Input Capacitance
330
VGS = 0V, VDS = -25V
Coss
Output Capacitance
100
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
3 3
nH
ns
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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